Thermal treatment and processing of SiC silicon carbide in high temperature furnaces and RTP systems
JTEKT Thermo Systems is represented in Europe by
Crystec Technology Trading GmbH
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Production of Silicon Carbide SiC Integrated Circuits ICs
Silicon carbide is a wide band semiconductor material with special properties, which allows operation
at high temperature and is is particularly suitable for power semiconductors. The fast and efficient switching of high
voltages and currents, high breakdown voltage, good radiation resistivity and high thermal conductivity are the positive properties of silicon carbide.
Disadvantages are the high costs and the high temperature, required for processing.
Very critical are the thermal processes for electrical activation of dopants Al, B (p-doping), N or P (n-doping).
The furnaces for silicon carbide processing must be able to reach up to 2000°C, while for the production
of circuits from silicon or GaAs temperatures up to 1200°C are usually sufficient. Only recently, vertical furnaces
using MoSi2 heaters or graphite heaters are available in the market.
Thermal Processes in SiC Technology
As well as in the production of silicon circuits, the production of SiC circuits contains several thermal
processes:
Activation of dopants after ion implantation
Thermal oxidation with dry or wet oxygen
Deposition of LPCVD-oxide from TEOS (Tetraethoxysilane)
Deposition of Oxynitride
PDA (post deposition anneal) of evaporated metallic layers
Short term contact annealing
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| Activation |
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High Temperature Furnace |
2000°C |
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| Oxynitriding |
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High Temperature LPCVD Furnace |
1400°C |
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| TEOS-Deposition |
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High Temperature LPCVD Furnace |
1350°C |
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| Thermal Oxidation |
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Vertical Furnace |
1200°C |
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| PDA (post deposition anneal) Annealing |
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RTP System |
1100°C |
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| Contact Annealing |
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RTP System |
1000°C |
Heizer für JTEKT-Öfen
JTEKT Thermo Systems (previously Koyo Thermo Systems) designs and manufactures its own patented heating elements with special properties.
Ordered by increasing temperature can JTEKT offer the following heaters:
- LGO heating elements (light gauge overbend) for temperatures of 1210 ° C - 1150 ° C
- HGC heaters (high gauge coil) for temperatures of 400 ° C - 1250 ° C
- MoSi2 heaters (molybdenum silicide) for temperatures up to 1400 ° C
- Carbon heating elements for high temperatures (1800°C, 1900°C, 2000°C)
| Heating elements |
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HGC heater
400°C - 1250 °C |
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MoSi2 heater
up to 1400 °C |
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Carbon heater
up to 2000 °C |
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Equipment Pictures
We can offer small, manually loaded equipment for research and development,
as well as fully automatic machines, working from cassette to cassette, for mass production.
We show here some pictures of production systems.
We are pleased to offer you a suitable system for your application, eventually also used equipment.
We can also do test runs for you in the various application centers of our partner companies.
Please contact us!
