Technology, production, manufacturing and equipment for SiC silicon carbide electronic
SiC Manufacturing Equipment
Crystec Technology Trading GmbH
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Production of Silicon Carbide SiC Integrated Circuits ICs
Silicon carbide is a wide band semiconductor material with special properties, which allows operation
at high temperature and is is particularly suitable for power semiconductors. The fast and efficient switching of high
voltages and currents, high breakdown voltage, good radiation resistivity and high thermal conductivity are the positive properties of silicon carbide.
Disadvantages are the high costs and the high temperature, required for processing.
The production of integrated circuits is divided into the front-end process for the formation of electronic circuits
and in the back-end process for contacting the circuits. Structuring is done by lithographic processes.
These are resist coating, exposure, development, process steps such as etching or layer deposition and finally
resist removal. We can offer equipment for many production steps for the production of SiC circuits, both for R&D,
as well as for mass production.
Very critical are the thermal processes, as for the processing of SiC circuits very high temperature is required,
especially for electrical activation of dopants Al, B (p-doping), N or P (n-doping).
The furnaces for silicon carbide processing must be able to reach up to 2000°C, while for the production
of circuits from silicon or GaAs temperatures up to 1200°C are usually sufficient.
Only recently, high temperature vertical furnaces using MoSi2 heaters
or graphite heaters are available in the market.
SiC Transistor Manufacturing
As well as in the production of silicon circuits, the production of SiC circuits consists of
lithographic processes, etching and film deposition by sputtering or vapor deposition, and doping and diffusion or
activation steps. The temperature requirments are much higher, in the range of 1400°C for LPCVD processes,
for the deposition of dielectric layers, oxynitride or oxide from TEOS, or 1800-2000°C for the activation
of implanted dopants.
| Lithography |
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Mask Aligner |
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| Etching |
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Plasma Etcher |
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| Ion Implantation |
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on request |
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| Activation |
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High Temperature Furnace 2000°C |
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| Oxynitriding |
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High Temperature LPCVD Furnace 1400°C |
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| TEOS-Deposition |
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LPCVD Furnace |
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Contact Forming
Lithography and etching steps are also necessary for the contacting of the circuits.
Metal layers are applied and bonded with wires. Annealing steps should be as short as possible and therefore
RTP systems are usually used.
| Lithography |
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Mask Aligner |
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| Contact hole formation |
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Plasma Etcher |
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| PDA (post deposition anneal) Annealing |
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RTP System |
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| Back Side Electrode |
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E-Beam Evaporator or Sputter Tool |
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| Contact Annealing |
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RTP System 1200°C |
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| Wiring |
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Bonder |
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We can offer small, manually loaded equipment for research and development,
as well as fully automatic machines, working from cassette to cassette, for mass production.
We are pleased to offer you a suitable system for your application, eventually also used equipment.
We can also do test runs for you in the various application centers of our partner companies.
Please contact us!
